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| DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain hFE at high IC * High efficiency leading to reduced heat generation * Reduced printed-circuit board area requirements. APPLICATIONS * Power management: - Complementary MOSFET driver - Dual supply line switching. * Peripheral driver: - Half and full bridge motor drivers - Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS4240DPN MARKING CODE M3 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector VCEO IC ICRP ICM RCEsat emitter-collector voltage QUICK REFERENCE DATA PBSS4240DPN MAX. SYMBOL PARAMETER NPN PNP 40 1.35 2 3 200 -40 -1.1 -2 -3 260 V A A A m UNIT collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 handbook, halfpage 5 4 6 5 4 TR2 TR1 1 Top view 2 3 MAM445 1 2 3 Fig.1 Simplified outline SOT457 (SC-74) and symbol. 2003 Feb 20 2 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - note 1 single peak - - - - Tamb 25 C; note 2 Tamb 25 C; note 3 Tamb 25 C; note 1 Tstg Tj Tamb Per device Ptot Notes total power dissipation Tamb 25 C; note 2 - storage temperature junction temperature operating ambient temperature - - - -65 - -65 PBSS4240DPN MIN. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) NPN PNP ICRP ICM IB IBM Ptot repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation open emitter open base open collector 40 40 5 1.35 -1.1 2 3 300 1 370 310 1.1 +150 150 +150 V V V A A A A mA A mW mW W C C C 600 mW 1. Operated under pulsed conditions: duty cycle 20%; pulse width tp 10 ms; mounting pad for collector standard footprint. 2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL Per transistor Rth j-a thermal resistance from junction to ambient in free air; note 1 in free air; note 2 340 110 K/W K/W PARAMETER CONDITIONS VALUE UNIT Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Operated under pulsed conditions: pulse width tp 10 ms; duty cycle 0.20; mounting pad for collector standard footprint. 2003 Feb 20 3 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - - 300 150 - PBSS4240DPN TYP. - - - - - - - MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICBO ICEO IEBO hFE fT Cc TR1 (NPN) hFE DC current gain VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCE = 5 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA IC = 2 A; IB = 200 mA; note 1 VBEsat VBEon RCEsat TR2 (PNP) hFE DC current gain VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VCE = -5 V; IC = -2 A; note 1 VCEsat saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -1 A; IB = -100 mA IC = -2 A; IB = -200 mA; note 1 VBEsat VBEon RCEsat Note 1. Pulse test: tp 300 s; 0.02. saturation voltage base-emitter turn-on voltage equivalent on-resistance IC = -1 A; IB = -50 mA VCE = -5 V; IC = -1 A IC = -1 A; IB = -100 mA; note 1 300 250 160 50 - - - - - - - - - - - -90 -100 -180 -400 - - - 800 - - - -120 -145 -260 -530 -1.1 -1 260 mV mV mV mV V V m base-emitter saturation voltage base-emitter turn-on voltage equivalent on-resistance IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 1 A; IB = 100 mA 300 200 75 - - - - - - - - - - 60 80 150 300 - - - 900 - - 75 100 200 400 1.2 1.1 200 mV mV mV mV V V m collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain transition frequency collector capacitance VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tj = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz 100 50 100 100 - - 12 MHz pF nA A nA nA 2003 Feb 20 4 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage 800 MHC471 handbook, halfpage 1.2 MHC472 hFE (1) VBE (V) (1) 600 0.8 (2) (2) 400 (3) (3) 0.4 200 0 10-1 1 10 102 103 104 IC (mA) 0 10-1 1 10 102 103 104 IC (mA) TR1 (NPN); VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN); VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) MHC473 handbook, halfpage 1.2 MHC474 VBEsat (V) 1 (1) 0.8 102 (1) (2) (2) 0.6 (3) (3) 0.4 10 10-1 1 10 102 103 104 IC (mA) 0.2 10-1 1 10 102 103 104 IC (mA) TR1 (NPN); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR1 (NPN); IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 5 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage 2 MHC475 IC (A) (1) (2) (3) (4) (5) (6) (7) (8) (9) 103 handbook, halfpage RCEsat () 102 MHC476 1.6 1.2 10 0.8 (10) 1 0.4 (1) (3) (2) 0 0 0.4 0.8 1.2 1.6 2 VCE (V) 10-1 10-1 1 10 102 103 104 IC (mA) TR1 (NPN); Tamb = 25 C. (1) (2) (3) (4) IB = 30 mA. IB = 27 mA. IB = 24 mA. IB = 21 mA. (5) IB = 18 mA. (6) IB = 15 mA. (7) IB = 12 mA. (8) IB = 9 mA. (9) IB = 6 mA. (10) IB = 3 mA. TR1 (NPN); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Feb 20 6 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage 1000 MHC464 handbook, halfpage -1.2 MHC465 hFE 800 (1) VBE (V) (1) -0.8 (2) 600 400 (2) (3) -0.4 (3) 200 0 -10-1 -1 -10 -102 -103 -104 IC (mA) 0 -10-1 -1 -10 -102 -103 -104 IC (mA) TR2 (PNP); VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP); VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. -103 handbook, halfpage VCEsat (mV) -102 MHC466 handbook, halfpage -1.2 MHC467 VBEsat (V) -1 (1) -0.8 (1) (2) (2) -10 (3) -0.6 (3) -0.4 -1 -10-1 -1 -10 -102 -103 -104 IC (mA) -0.2 -10-1 -1 -10 -102 -104 -103 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. TR2 (PNP); IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 7 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN handbook, halfpage -1.2 IC (A) -0.8 MHC468 handbook, halfpage (4) (3) (2) (1) -2.4 IC (A) -2 MHC469 (1) (2) (3) (4) (5) (6) (7) (8) (9) (5) (6) (7) (8) -1.6 -1.2 -0.8 -0.4 -0.4 (9) (10) (10) 0 0 -0.4 -0.8 -1.2 -1.4 -2 VCE (V) 0 0 -0.4 -0.8 -1.2 -1.6 -2 VCE (V) TR2 (PNP); Tamb = 25 C. (1) (2) (3) (4) IB = -7 mA. IB = -6.3 mA. IB = -5.6 mA. IB = -4.9 mA. (5) IB = -4.2 mA. (6) IB = -3.5 mA. (7) IB = -2.8 mA. (8) IB = -2.1 mA. (9) IB = -1.4 mA. (10) IB = -0.7 mA. TR2 (PNP); Tamb = 25 C. (1) (2) (3) (4) IB = -50 mA. IB = -45 mA. IB = -40 mA. IB = -35 mA. (5) IB = -30 mA. (6) IB = -25 mA. (7) IB = -20 mA. (8) IB = -15 mA. (9) IB = -10 mA. (10) IB = -5 mA. Fig.12 Collector current as a function of collector-emitter voltage; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2003 Feb 20 8 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN 103 handbook, halfpage RCEsat () 102 MHC470 10 (1) (2) 1 (3) 10-1 -10-1 -1 -10 -102 -103 -104 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Feb 20 9 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PACKAGE OUTLINE PBSS4240DPN Plastic surface mounted package; 6 leads SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2003 Feb 20 10 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION PBSS4240DPN This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2003 Feb 20 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Feb 20 Document order number: 9397 750 10783 |
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